EFA480B データシート - Excelics Semiconductor, Inc.
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EFA480B
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• +34.0dBm TYPICAL OUTPUT POWER
• 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz
• 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• EPA480BV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 80mA PER BIN RANGE
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