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EFA072A データシート - ETC

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EFA072A

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[Excelics]

Low Distortion GaAs Power FET

• +25.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE

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部品番号
コンポーネント説明
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Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.

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