Low Distortion GaAs Power FET
• +25.0dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• EFA060BV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 10mA PER BIN RANGE