Description
Cree’s CRF-22010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater power density and increased reliability compared to Si and GaAs transistors.

FEATUREs
• 12 dB Small Signal Gain
• 10 W Minimum P1dB
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 3 GHz Operation
• High Efficiency

APPLICATIONs
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA, and W-CDMA
• Broadband Amplifiers
• CATV Amplifiers
• MMDS