Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifer circuits. The transistor is available in both screw-down, flange and solderdown, pill packages.

FEATURES
• Up to 8 GHz Operation
• 18 dB Small Signal Gain at 2.0 GHz
• 16 dB Small Signal Gain at 4.0 GHz
• 17 W typical PSAT
• 70 % Effciency at PSAT
• 28 V Operation

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms