CPD07 データシート - Central Semiconductor
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CPD07
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Central Semiconductor
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 98 x 98 MILS
Die Thickness 10.4 MILS
Anode Bonding Pad Area 82.5 x 82.5 MILS
Top Side Metalization Au - 5,000Å
Back Side Metalization Au - 2,000Å
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