CPD05(2003) データシート - Central Semiconductor
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CPD05
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Central Semiconductor
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 50 x 50 MILS
Die Thickness 9.5 MILS
Anode Bonding Pad Area 34 x 34 MILS
Top Side Metalization Au - 5,000Å
Back Side Metalization Au - 2,000Å
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コンポーネント説明
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General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip ( Rev : 2003 )
Central Semiconductor
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER ( Rev : 2019 )
Jiangsu Yutai Electronics Co., Ltd
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER ( Rev : 2019 )
Jiangsu Yutai Electronics Co., Ltd
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