The CP396V-2N2369A is a silicon NPN transistor designed for high speed saturated switching applications.

MECHANICAL SPECIFICATIONS:

   Die Size 14.2 x 8.7 MILS
   Die Thickness 7.1 MILS
   Base Bonding Pad Size 2.9 x 3.7 MILS
   Emitter Bonding Pad Size 2.9 x 3.7 MILS
   Top Side Metalization Al – 13,000Å
   Back Side Metalization Au-As – 9,000Å
   Scribe Alley Width 1.96 MILS
   Wafer Diameter 5 INCHES
   Gross Die Per Wafer 139,524