CP207 データシート - Central Semiconductor
メーカー
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 9.0 x 14 MILS
Die Thickness 8.0 MILS
Base Bonding Pad Area 2.7 x 2.7 MILS
Emitter Bonding Pad Area 2.7 x 2.7 MILS
Top Side Metalization Al - 13,000Å
Back Side Metalization Au - 6,000Å
Small Signal Transistor NPN - Saturated Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP- Saturated Switch Transistor Chip
Central Semiconductor Corp
Small Signal Transistor PNP - Saturated Switch Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistors NPN - Saturated Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP- Saturated Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Saturated Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Saturated Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP- Saturated Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
