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C5507 データシート - NEC => Renesas Technology

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部品番号
C5507

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12 Pages

File Size
85 kB

メーカー
NEC
NEC => Renesas Technology NEC

FEATURES
• Low noise and high gain with low collector current
• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)


部品番号
コンポーネント説明
PDF
メーカー
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
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NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.

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