2SC5606 データシート - Renesas Electronics
部品番号
2SC5606
Other PDF
no available.
PDF
page
9 Pages
File Size
165.9 kB
メーカー
Renesas Electronics
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
部品番号
コンポーネント説明
PDF
メーカー
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Electronics
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Laboratories.
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Laboratories.
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
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