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BUK625R2-30C データシート - Philips Electronics

BUK625R2-30C image

部品番号
BUK625R2-30C

Other PDF
  no available.

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page
14 Pages

File Size
168.7 kB

メーカー
Philips
Philips Electronics Philips

General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.


FEATUREs and benefits
◾ AEC Q101 compliant
◾ Suitable for standard and logic level
   gate drive sources
◾ Suitable for thermally demanding
   environments due to 175 °C rating


APPLICATIONs
◾ 12 V Automotive systems
◾ Electric and electro-hydraulic power
   steering
◾ Motors, lamps and solenoid control
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
   switching


部品番号
コンポーネント説明
PDF
メーカー
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved

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