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BUK6207-55C データシート - Nexperia B.V. All rights reserved

BUK6207-55C image

部品番号
BUK6207-55C

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page
14 Pages

File Size
834.8 kB

メーカー
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.


FEATUREs and benefits
◾ AEC Q101 compliant
◾ Compatible with logic and standard
   level gate drives
◾ Suitable for thermally demanding
   environments due to 175 °C rating


APPLICATIONs
◾ 12 V and 24 V automotive systems
◾ Electric and electro-hydraulic power
   steering
◾ Motors, lamps and solenoid control
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
   switching


部品番号
コンポーネント説明
PDF
メーカー
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved

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