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BS62LV8000BI データシート - Brilliance Semiconductor

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部品番号
BS62LV8000BI

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10 Pages

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BSI
Brilliance Semiconductor BSI

GENERAL DESCRIPTION
The BS62LV8000 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage.


FEATURES
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
    Vcc = 3V C-grade: 20mA (Max.) operating current
                    I -grade: 25mA (Max.) operating current
                    0.5uA (Typ.) CMOS standby current
    Vcc = 5V C-grade: 45mA (Max.) operation current
                    I -grade: 50mA (Max.) operating current
                    3uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max) at Vcc = 3V
    -10 100ns (Max) at Vcc = 3V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options

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部品番号
コンポーネント説明
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メーカー
Very Low Power/Voltage CMOS SRAM 1M X 8 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 8 bit ( Rev : 2008 )
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 16 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 16 bit ( Rev : 2008 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 16 bit
Brilliance Semiconductor

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