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BS62LV8006 データシート - Brilliance Semiconductor

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部品番号
BS62LV8006

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9 Pages

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BSI
Brilliance Semiconductor BSI

GENERAL DESCRIPTION
The BS62LV8006 is a high performance , very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 8.0uA at 5V/25oC and maximum access time of 55ns at 5.0V/85°C.


FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade: 75mA (@55ns) operating current
                       I -grade: 76mA (@55ns) operating current
                       C-grade: 60mA (@70ns) operating current
                       I -grade: 61mA (@70ns) operating current
                       8.0uA (Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options

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部品番号
コンポーネント説明
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Very Low Power/Voltage CMOS SRAM 1M X 8 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 8 bit
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 8 bit ( Rev : 2008 )
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M X 16 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 16 bit ( Rev : 2008 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 1M X 16 bit
Brilliance Semiconductor

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