BS616UV1620 データシートの表示（PDF） - Brilliance Semiconductor

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BS616UV1620

Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616UV1620

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )

PARAMETER

NAME

V IL

V IH

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

I IL

Input Leakage Current

TEST CONDITIONS

Vcc= 2.0V

Vcc= 2.0V

Vcc = Max, VIN = 0V to Vcc

I OL

Output Leakage Current

Vcc = Max, CE1 = VIH, or CE2 = ViL, or

OE = VIH, VI/O = 0V to Vcc

V OL

Output Low Voltage

Vcc= max, IOL = 1mA

Vcc= 2.0V

V OH

I CC

Output High Voltage

Vcc= Min, IOH= -0.5mA

Operating Power Supply

Current

Vcc= max, CE1 = VILand CE2 =

VIH,

IDQ = 0mA, F = Fmax(3)

Vcc= 2.0V

Vcc= 2.0V

I CCSB

Standby Current-TTL

Vcc= max, CE1 = VIH or CE2 =

VIL, IDQ = 0mA

Vcc= 2.0V

I CCSB1

Standby Current-CMOS

Vcc= max,CE1 Њ Vcc-0.2V, or

CE2 Љ 0.2V, or LB and UB Њ

Vcc - 0.2V,

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

Vcc= 2.0V

MIN. TYP. (1) MAX.

-0.5

--

0.4

1.4

--

Vcc+0.2

--

--

1

UNITS

V

V

uA

--

--

1

uA

--

--

0.4

V

1.6

--

--

V

--

--

25

mA

--

--

0.8

mA

--

1.2

30

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/ tRC .

R0201-BS616UV1620

4

Revision 2.2

April 2001

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