„DESCRIPTION
The BS616LV1015 is a high performance, very low  power CMOS Static Random Access Memory organized  as 65,536 words  by  16  bits  and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology  and circuit techniques provide both high speed and low power features with a typical CMOS standby  current of 0.4uA and maximum access time of 55ns in 5V operation. Easy memory expansion is  provided by  an  active LOW  chip enable(CE) and active LOW output enable(OE) and three-state output drivers.

„FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
  Vcc = 5.0V C-grade : 35mA (Max.) operating current
                 I- grade : 40mA (Max.) operating current
                0.4uA (Typ.) CMOS standby current
• High speed access time :
  -55  55ns (Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin