DESCRIPTION
The BS616LV1013 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3.0V operation.

FEATURES
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
    Vcc = 3.0V C-grade : 20mA (Max.) operating current
                       I-grade : 25mA (Max.) operating current
                       0.02uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin