DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange.

FEATURES
• Suitable for short and medium pulse applications
• Internal input and output matching networks for an easy circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high emitter efficiency
• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS
• Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz range.