DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

FEATURES
• Very high power gain
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure
• Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input prematching network.

APPLICATIONS
    Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz.