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BB504C データシート - Renesas Electronics

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部品番号
BB504C

Other PDF
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page
10 Pages

File Size
197.8 kB

メーカー
Renesas
Renesas Electronics Renesas

Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
   Built in ESD absorbing diode. Withstand
   up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)

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部品番号
コンポーネント説明
PDF
メーカー
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC VHF RF Amplifier
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Built in Biasing Circuit MOS FET IC VHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC VHF RF Amplifier
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Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics

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