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BB501M データシート - Renesas Electronics

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部品番号
BB501M

Other PDF
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page
11 Pages

File Size
283.5 kB

メーカー
Renesas
Renesas Electronics Renesas

Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.5 dB typ. at f = 900 MHz
• Low noise; NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)

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部品番号
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メーカー
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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