Description
The ATF-26884 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

FEATUREs
• High Output Power: 18.0 dBm Typical P 1 dBat 12 GHz
• High Gain: 9.0 dB Typical GSS at 12 GHz
• Low Cost Plastic Package
• Tape-and-Reel Packaging Option Available[1]