Description
The ATF-10736 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.

FEATUREs
• High Associated Gain: 13.0 dB Typical at 4 GHz
• Low Bias: VDS= 2 V, IDS= 25 mA
• High Output Power: 20.0 dBm typical P 1 dB at 4 GHz
• Low Noise Figure: 1.2 dB Typical at 4 GHz
• Cost Effective Ceramic Microstrip Package
• Tape-and-Reel Packaging Option Available [1]