Functional description
The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications. The chip enable input CEpermits easy memory and expansion with multiple-bank memory systems.

FEATUREs
• AS7C1025A (5V version)
• AS7C31025A (3.3V version)
• Industrial and commercial temperatures
• Organization: 131,072 x 8 bits
• High speed
- 10/12/15/20 ns address access time
- 5, 6, 7, 8 ns output enable access time
• Low power consumption: ACTIVE
- 853 mW (AS7C1025A) / max @ 10 ns (5V)
- 522 mW (AS7C31025A) / max @ 10 ns (3.3V)
• Low power consumption: STANDBY
- 55 mW (AS7C1025A) / max CMOS (5V)
- 36 mW (AS7C31025A) / max CMOS (3.3V)
• Latest 6T 0.25u CMOS technology
• Easy memory expansion with CE, OEinputs
• Center power and ground
• TTL/LVTTL-compatible, three-state I/O
• JEDEC-standard packages
- 32-pin, 300 mil SOJ
- 32-pin, 400 mil SOJ
- 32-pin, TSOP 2
• ESD protection ≥2000 volts
• Latch-up current ≥200 mA