FEATURES
1. 1 Form B output type
2. 60V type couples high capacity
   (0.55A) with low on-resistance (Typ. 1Ω).
3. Low on-resistance
   This has been realized thanks to the
   built-in MOSFET processed by our
   proprietary method, DSD (Double
   diffused and Selective Doping) method.
4. Controls low-level analog signals
   PhotoMOS feature extremely low closed
   circuit offset voltage to enable control of
   low-level analog signals without
   distortion.
5. High sensitivity and low on resistance
   Can control max. 0.55 A load current with
   5 mA input current.
   Low on-resistance of Typ. 1Ω
   (AQV412EH).
6. Low-level off-state leakage current
7. Reinforced insulation: 5,000 V
   More than 0.4 mm internal insulation
   distance between inputs and outputs.
   Conforms to EN41003, EN60950
   (reinforced insulation).

TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Telephone equipment
• Sensing equipment