AQV412EH データシートの表示（PDF） - Panasonic Corporation
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AQV412EH Datasheet PDF : 5 Pages
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GE 1 Form B (AQV41❍EH)
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
0.6
0.4
0.2
AQV412EH
-1
-0.5
0
0
0.5
1
Voltage, V
-0.2
-0.4
-0.6
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
0.5
0.4
0.3
AQV410EH, AQV414EH
AQV412EH
0.2
0.1
00
10 20 30 40 50 60
LED forward current, mA
9. Off state leakage current vs. load voltage
characteristics
Sample: All types;
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25°C 77°F
10–3
10–6
AQV414EH
AQV410EH
10–9
AQV412EH
10–12
0
20
40
60
80 100
Load voltage, V
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25°C 77°F
500
400
300
AQV412EH
200
100
AQV410EH, AQV414EH
0
10 20 30 40 50 60
Applied voltage, V
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
10.0
8.0
AQV410EH
AQV414EH
6.0
4.0
AQV412EH
2.0
0
10 20 30 40 50 60
LED forward current, mA
–4–
ASCTB127E 201703-T
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