Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
Features
• VDS=-20V
• RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ
• RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ
• Advanced trench process technology
• High Density Cell Design For Ultra Low On-Resistance