Description
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATUREs
• -15V/-3.5A, RDS(ON)=70mΩ @VGS=-4.5V
• -15V/-3.0A, RDS(ON)=85mΩ @VGS=-2.5V
• -15V/-2.0A, RDS(ON)=105mΩ @VGS=-1.8V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-23-3L package design

APPLICATION
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter