2SB886 データシート - New Jersey Semiconductor
部品番号
2SB886
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2 Pages
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69.6 kB
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New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE=1500(Min)@lc=-4A
• Wide Area of Safe Operation
• Low Collector-Emitter Saturation Voltage-
: VcE(sat) = -1.5V(Max)@ lc= -4A
• Complement to Type 2SD1196
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
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