STS4DNFS30L データシートの表示（PDF） - STMicroelectronics

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STS4DNFS30L

N-channel 30V - 0.044Ω - 4A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier

STMicroelectronics 

STS4DNFS30L

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4A, VGS = 0

ISD = 4A, VDD = 15V

di/dt = 100A/µs,

Tj = 150°C

(see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min Typ. Max Unit

4

A

16 A

1.2 V

35

ns

25

nC

1.4

A

5/12

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