STS4DNFS30L データシートの表示（PDF） - STMicroelectronics
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STS4DNFS30L
STMicroelectronics
STS4DNFS30L Datasheet PDF : 12 Pages
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STS4DNFS30L
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (vgs = 0)
VDGR Drain-gate voltage (RGS = 20 kΩ)
VGS Gate- source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM (1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C dual operation
1. Pulse width limited by safe operating area
Table 2. Schottky absolute maximum ratings
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
dv/dt
Repetitive peak reverse
voltage
RMS forward current
Average forward current
TL=125°C
δ=0.5
Surge non repetitive forward
current
tp = 10 ms
Sinusoidal
tp = 2 µs
Repetitive peak reverse current
F=1 kHz
Non repetitive peak reverse
current
tp = 100 µs
Critical rate of rise of reverse
voltage
Table 3. Thermal data
Rthj-a
Thermal resistance junction-ambient
MOSFET(1)
TJ Junction temperature
Tstg Storage temperature range
1. Mounted on FR-4 board (steady state)
Electrical ratings
Value
Unit
30
V
30
V
±16
V
4
A
2.5
A
16
A
2
W
Value
30
20
3
75
1
1
10000
62.5
-55 to 150
-55 to 150
Unit
V
A
A
A
A
A
V/µs
°C/W
°C/W
°C
°C
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