STS4DNFS30L データシートの表示（PDF） - STMicroelectronics
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STS4DNFS30L
STMicroelectronics
STS4DNFS30L Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STS4DNFS30L
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS Breakdown voltage
Zero gate voltage
IDSS Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS = 0
VDS = Max rating
VDS=Max rating,
TC=125°C
VGS = ±16V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2A
VGS = 5V, ID = 2A
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
V
0.044 0.055 Ω
0.051 0.065 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS= 15V, ID=2A
VDS = 25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24V, ID = 4A,
VGS = 5V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Min. Typ. Max. Unit
5
S
330
pF
90
pF
40
pF
6.5
9
nC
3.6
nC
2
nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID=2A,
RG=4.7Ω, VGS=5V
(see Figure 12)
VDD=15 V, ID=2A,
RG=4.7Ω, VGS=5V
(see Figure 12)
Min. Typ. Max. Unit
11
ns
100
ns
25
ns
22
ns
4/12
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