2N7002BKW データシートの表示（PDF） - NXP Semiconductors.
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2N7002BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
5.0
VGS
(V)
4.0
017aaa047
3.0
2.0
1.0
0.0
0.0
0.2
0.4
0.6
0.8
QG (nC)
ID = 300 mA; VDD = 6 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
1.2
IS
(A)
0.8
0.4
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 15. Gate charge waveform definitions
017aaa048
(1)
(2)
0.0
0.0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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