2N7002BKW データシートの表示（PDF） - NXP Semiconductors.
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2N7002BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
0.7
ID VGS = 4.0 V
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
1.0
Tamb = 25 °C
3.5 V
017aaa039
3.25 V
3.0 V
2.75 V
2.5 V
2.0
3.0
4.0
VDS (V)
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical
values
6.0
RDSon
(Ω)
4.0
017aaa041
(1)
(2)
(3)
2.0
(4)
(5)
10−3
ID
(A)
10−4
10−5
017aaa040
(1)
(2)
(3)
10−6
0.0
1.0
2.0
3.0
VGS (V)
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
6.0
RDSon
(Ω)
4.0
017aaa042
(1)
2.0
(2)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ID (A)
0.0
0.0
2.0
4.0
6.0
8.0
10.0
VGS (V)
Tamb = 25 °C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
ID = 500 mA
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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