2N7002BKW データシートの表示（PDF） - NXP Semiconductors.
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2N7002BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation Tamb = 25 °C
[2] -
[1] -
Tsp = 25 °C
-
Tj
junction temperature
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Source-drain diode
IS
source current
Tamb = 25 °C
[1] -
ESD maximum rating
VESD
electrostatic discharge human body model
[3] -
voltage
Max Unit
275
mW
330
mW
880
mW
150
°C
+150 °C
+150 °C
310
mA
2000 V
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Measured between all pins.
120
Pder
(%)
80
017aaa001
120
Ider
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
Tamb (°C)
Fig 1.
Pder
=
--------P----t-o---t-------
Pt o t ( 25 ° C )
×
100
%
Normalized total power dissipation as a
function of ambient temperature
0
−75
−25
25
75
125
175
Tamb (°C)
Fig 2.
Ider
=
--------I--D---------
I D ( 25 ° C )
×
100
%
Normalized continuous drain current as a
function of ambient temperature
2N7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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