ST1S06 データシートの表示（PDF） - STMicroelectronics
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ST1S06 Datasheet PDF : 20 Pages
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ST1S06xx
Electrical characteristics
Table 6.
Symbol
Electrical characteristics for ST1S06PM12
(VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, CI = 4.7 µF, CO = 22 µF, L1 = 3.3 µH, TJ = -30 °C
to 125 °C unless otherwise specified. Typical values are referred to TJ = 25 °C)
Parameter
Test conditions
Min. Typ. Max. Unit
OUT
IO
VI
IQ
IO
Output feedback pin
IO pin bias current
Minimum input voltage
Quiescent current
Output current
VINH Inhibit threshold
IINH Inhibit pin current
%VO/ΔVI Reference line regulation
VO = 1.5V
IO = 10mA to 1.5A
VINH > 1.2V
VINH < 0.4V, TJ = -30°C to 85°C
VI = 2.7 to 5.5V Note 1
Device ON, VI = 2.7 to 5.5V
Device ON, VI = 2.7 to 5V
Device OFF
1.176
2.7
1.5
1.3
1.2
VI = 2.7V to 5.5V Note 1
%VO/ΔIO Reference load regulation
IO = 10mA to 1.5A Note 1
PWMfS PWM switching frequency
VFB = 0.8V
1.2
DMAX Maximum duty cycle
80
RDSON-N NMOS switch on resistance
ISW = 750 mA
RDSON-P PMOS switch on resistance
ISW = 750 mA
ISWL Switching current limitation
Note 1
ν
Efficiency Note 1
IO = 10mA to 100mA, VO = 1.2V 60
IO = 100mA to 1.5A, VO = 1.2V
80
TSHDN Thermal shutdown
130
THYS Thermal shutdown hysteresis
%VO/ΔIO Load transient response
IO = 100mA to 750mA, TJ =
25°C tR = tF ≥ 200ns, Note 1
-5
%VO/ΔIO Short circuit removal response
IO = 10mA to IO = short,
TJ = 25°C Note 1
-10
1.2
15
0.2
0.2
1.5
87
0.12
0.15
2.3
85
150
15
1.224 V
20 µA
V
1.5 mA
1
µA
A
V
0.4
2
µA
0.3
%VO/
ΔVI
0.3
%VO/
ΔIO
1.8 MHz
%
Ω
Ω
A
%
°C
°C
+5 %VO
+10 %VO
Note: 1 Guaranteed by design, but not tested in production
7/20
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