ST1S06 データシートの表示（PDF） - STMicroelectronics

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ST1S06

Synchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed or adjustable, step-down switching regulator

STMicroelectronics 

Electrical characteristics

ST1S06xx

4

Electrical characteristics

Table 5.

Symbol

Electrical characteristics for ST1S06

(VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, CI = 4.7 µF, CO = 22 µF, L1 = 3.3 µH, TJ = -30 °C

to 125 °C (unless otherwise specified. Typical values are referred to TJ = 25 °C)

Parameter

Test conditions

Min. Typ. Max. Unit

FB Feedback voltage

IFB

VFB pin bias current

VI

Minimum input voltage

IQ

Quiescent current

IO

Output current

VINH Inhibit threshold

IINH Inhibit pin current

%VO/ΔVI Reference line regulation

784

IO = 10mA to 1.5A

2.7

VINH > 1.2V

VINH < 0.4V, TJ = -30°C to 85°C

VI = 2.7 to 5.5V Note 1

1.5

Device ON, VI = 2.7 to 5.5V

1.3

Device ON, VI = 2.7 to 5V

1.2

Device OFF

VI = 2.7V to 5.5V Note 1

%VO/ΔIO Reference load regulation

IO = 10mA to 1.5A Note 1

PWMfS PWM switching frequency

VFB = 0.8V

1.2

DMAX Maximum duty cycle

80

RDSON-N NMOS switch on resistance

ISW = 750 mA

RDSON-P PMOS switch on resistance

ISW = 750 mA

ISWL Switching current limitation

Note 1

ν

Efficiency Note 1

IO = 10mA to 100mA, VO = 3.3V 65

IO = 100mA to 1.5A, VO = 3.3V

85

TSHDN Thermal shutdown

130

THYS Thermal shutdown hysteresis

%VO/ΔIO Load transient response

IO = 100mA to 750mA, TJ =

25°C tR = tF ≥ 200ns, Note 1

-5

%VO/ΔIO Short circuit removal response

IO = 10mA to IO = short,

TJ = 25°C Note 1

-10

800

0.2

0.2

1.5

87

0.12

0.15

2.3

90

150

15

816 mV

600 nA

V

1.5 mA

1

µA

A

V

0.4

2

µA

0.3

%VO/

ΔVI

0.3

%VO/

ΔIO

1.8 MHz

%

Ω

Ω

A

%

°C

°C

+5 %VO

+10 %VO

Note: 1 Guaranteed by design, but not tested in production

6/20

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