STB13NM60N データシートの表示（PDF） - STMicroelectronics

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STB13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages

STMicroelectronics 

STB13NM60N, STD13NM60N

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max. Unit

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 11 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs -

VDD = 100 V

-

(see Figure 17)

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs -

VDD = 100 V, Tj = 150 °C

-

(see Figure 17)

-

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

11 A

44 A

1.5 V

230

ns

2

µC

18

A

290

ns

2.5

µC

17

A

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