STB13NM60N データシートの表示（PDF） - STMicroelectronics

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STB13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages

STMicroelectronics 

STB13NM60N,

STD13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II

Power MOSFETs in D²PAK and DPAK packages

Datasheet — production data

Features

TAB

3

1

D²PAK

TAB

3

1

DPAK

Order code VDS (@Tjmax) RDS(on) max

STB13NM60N

STD13NM60N

650 V

0.36 Ω

ID

11 A

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Figure 1. Internal schematic diagram

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Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

6&

Order code

STB13NM60N

STD13NM60N

Table 1. Device summary

Marking

Packages

13NM60N

D²PAK

DPAK

Packaging

Tape and reel

June 2015

This is information on a product in full production.

DocID024095 Rev 3

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