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10XSD200 データシートの表示(PDF) - Freescale Semiconductor

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10XSD200
Freescale
Freescale Semiconductor Freescale
10XSD200 Datasheet PDF : 60 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 C TA 125 C, GND = 0 V. Typical values are
average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
parameter
Symbol
Min
Typ
Max
Unit
ESR0 Output Current Sensing Error (% after offset compensation(17) at ESR0_ERR(Comp)
output current level (Sense ratio CSR0 selected):
TJ=-40 C
6.0 A
-10
3.0 A
-10
1.5 A
0.75 A
TJ=125C
6.0 A
3.0 A
1.5 A
0.75 A
TJ=25 to 125C
6.0 A
3.0 A
1.5 A
0.75 A
-10
-10
-9.0
-8.0
-8.0
-9.0
-9.0
-8.0
-8.0
-9.0
ESR1 Output Current Sensing Error (%, uncompensated (18) at output
current level (Sense ratio CSR1 selected):
ESR1_ERR
TJ=-40 C
1.5 A
-15
TJ=125C
1.5 A
-12
TJ=25 to 125C
1.5 A
-12
%
10
10
10
10
9.0
8.0
8.0
9.0
9.0
8.0
8.0
9.0
%
15
12
12
Notes:
17. See note (16), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).
Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.
18. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see
section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS
Analog Integrated Circuit Device Data
Freescale Semiconductor
10XSD200
11

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