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10XSD200 データシートの表示(PDF) - Freescale Semiconductor

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10XSD200
Freescale
Freescale Semiconductor Freescale
10XSD200 Datasheet PDF : 60 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, - 40 C TA 125 C, GND = 0 V. Typical values are
average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
parameter
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)
Current Sensing Ratio (14)
CSNS_ratio bit = 0 (high current mode)
CSNS_ratio bit = 1 (low current mode)
Minimum measurable load current with compensated error (15)
CSR0
CSR1
I_LOAD_MIN
1/3000
1/1000
100
mA
CSNS leakage current in OFF state (CSNSx_en = 0, CSNS_ratio bit_x = 0)
ICSR_LEAK
-4.0
+4.0
µA
Systematic offset error (see Current Sense Errors)
I_LOAD_ERR_SYS
11
mA
Random offset error
I_LOAD_ERR_RAND
-150
ESR0 Output Current Sensing Error (%, uncompensated(16) at output
current level (Sense ratio CSR0 selected):
ESR0_ERR
150
mA
%
TJ=-40 C
6.0 A
-13
13
3.0 A
-12
12
1.5 A
0.75 A
TJ=125C
6.0 A
3.0 A
1.5 A
0.75 A
TJ=25 to 125C
-17
17
-31
31
-10
10
-9.0
9.0
-12
12
-19
19
6.0 A
3.0 A
1.5 A
0.75 A
-10
10
-9.0
9.0
-12
12
-22
22
Notes:
14. Current Sense Ratio CSRx = ICSNS / IHS[x]
15. See note (16), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).
Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.
16. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see
section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS
10XSD200
10
Analog Integrated Circuit Device Data
Freescale Semiconductor

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