IGW25N120H3 データシートの表示（PDF） - Infineon Technologies
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IGW25N120H3 Datasheet PDF : 16 Pages
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IGW25N120H3
High speed switching series third generation
1000
tÁñÓËËò
tË
tÁñÓÒò
tØ
1000
tÁñÓËËò
tË
tÁñÓÒò
tØ
100
100
10
5
15
25
35
45
I†, COLLECTOR CURRENT [A]
Figure 9. Typical switching times as a function of
collector current
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, R•=23Â, test circuit in Fig. E)
1000
tÁñÓËËò
tË
tÁñÓÒò
tØ
10
5
15
25
35
45
55
65
R•, GATE RESISTOR [Â]
Figure 10. Typical switching times as a function of
gate resistor
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, I†=25A, test circuit in Fig. E)
7
typ.
min.
max.
6
5
100
4
3
10
0
25 50 75 100 125 150 175
TÎ, JUNCTION TEMPERATURE [°C]
Figure 11. Typical switching times as a function of
junction temperature
(ind. load, V†Š=600V, V•Š=15/0V,
I†=25A, R•=23Â, test circuit in Fig. E)
2
0
25 50 75 100 125 150 175
TÎ, JUNCTION TEMPERATURE [°C]
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(I†=0.85mA)
9
Rev. 1.1, 2011-01-25
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