IGW25N120H3 データシートの表示（PDF） - Infineon Technologies

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IGW25N120H3

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

High speed switching series third generation

Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified

Parameter

Symbol Conditions

Dynamic Characteristic

Input capacitance

CÍþÙ

Output capacitance

CÓþÙ

Reverse transfer capacitance

CØþÙ

Gate charge

Q•

Internal emitter inductance

measured 5mm (0.197 in.)

from

case

LŠ

Short circuit collector current

Max. 1000 short circuits

I†ñ»†ò

Time between short circuits: ú 1.0s

V†Š = 25V, V•Š = 0V, f = 1MHz

V†† = 960V, I† = 25.0A,

V•Š = 15V

V•Š = 15.0V, V†† ù 600V,

t»† ù 10µs

TÝÎ = 175°C

Value

Unit

min. typ. max.

- 1430 -

-

95

- pF

-

75

-

- 115.0 - nC

- 13.0 - nH

-

-A

87

Switching Characteristic, Inductive Load, at TÝÎ = 25°C

Parameter

Symbol Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

tÁñÓÒò TÝÎ = 25°C,

tØ

V†† = 600V, I† = 25.0A,

V•Š = 0.0/15.0V,

tÁñÓËËò r• = 23.0Â, Lÿ = 80nH,

tË

Cÿ = 67pF

Lÿ, Cÿ from Fig. E

EÓÒ

Energy losses include “tail” and

diode (IKW25N120H3) reverse

EÓËË

recovery.

EÚÙ

Turn-on energy

Turn-off energy

Total switching energy

EÓÒ

TÝÎ = 25°C,

EÓËË

V†† = 800V, I† = 10.0A,

V•Š = 0.0/15.0V,

EÚÙ

r• = 3.0Â, Lÿ = 80nH,

Cÿ = 67pF

Lÿ, Cÿ from Fig. E

Energy losses include “tail” and

diode (IDH15S120) reverse

recovery.

Value

Unit

min. typ. max.

-

27

- ns

-

41

- ns

- 277 - ns

-

17

- ns

- 1.80 - mJ

- 0.85 - mJ

- 2.65 - mJ

- 0.08 - mJ

- 0.27 - mJ

- 0.35 - mJ

5

Rev. 1.1, 2011-01-25

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