IGW25N120H3 データシートの表示（PDF） - Infineon Technologies
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IGW25N120H3 Datasheet PDF : 16 Pages
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IGW25N120H3
High speed switching series third generation
Maximum ratings
Parameter
Collector-emitter voltage
DC collector current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
Pulsed collector current, tÔ limited by TÝÎÑÈà
Turn off safe operating area V†Š ù 1200V, TÝÎ ù 175°C
Gate-emitter voltage
Short circuit withstand time
V•Š = 15.0V, V†† ù 600V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
TÝÎ = 175°C
Power dissipation T† = 25°C
Power dissipation T† = 100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Symbol
V†Š
I†
I†ÔÛÐÙ
-
V•Š
tȠ
PÚÓÚ
TÝÎ
TÙÚÃ
M
Value
Unit
1200
V
50.0
A
25.0
100.0
A
100.0
A
±20
V
µs
10
326.0
156.0
W
-40...+175
°C
-55...+150
°C
260
°C
0.6
Nm
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
RÚÌñÎ-Êò
RÚÌñÎ-Èò
Max. Value
Unit
0.46
K/W
40
K/W
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.50mA
Collector-emitter saturation voltage V†ŠÙÈÚ
V•Š = 15.0V, I† = 25.0A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 175°C
Gate-emitter threshold voltage
V•ŠñÚÌò I† = 0.85mA, V†Š = V•Š
Zero gate voltage collector current I†Š»
V†Š = 1200V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
Gate-emitter leakage current
I•Š» V†Š = 0V, V•Š = 20V
Transconductance
gËÙ
V†Š = 20V, I† = 25.0A
Value
Unit
min. typ. max.
1200 -
-V
-
-
2.05 2.40
2.50 -
V
- 2.70 -
5.0 5.8 6.5 V
-
- 250.0 µA
-
- 2500.0
-
- 600 nA
- 13.0 - S
4
Rev. 1.1, 2011-01-25
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