STS4DNF30L データシートの表示（PDF） - STMicroelectronics

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STS4DNF30L

Dual N-channel 30 V, 0.039 Ω, 4 A SO-8 STripFET™ Power MOSFET

STMicroelectronics 

Test circuits

3

Test circuits

STS4DNF30L

Figure 13. Switching times test circuit for

resistive load

Figure 14. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

RL

2200

3.3

µF

µF VDD

IG=CONST

VD

Vi=20V=VGMAX

100Ω

D.U.T.

VGS

RG

t(s) PW

D.U.T.

2200

µF

2.7kΩ

VG

47kΩ

uc PW

rod AM01468v1

1kΩ

AM01469v1

P Figure 15. Test circuit for inductive load

Figure 16. Unclamped Inductive load test

te switching and diode recovery times

circuit

Obsole G

t(s) - 25Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100µH

B

3.3

B

µF

D

G

uc RG

S

1000

µF

VDD

Vi

L

VD

2200

3.3

µF

µF

VDD

ID

D.U.T.

rod Pw

P AM01470v1

AM01471v1

lete Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

so V(BR)DSS

Ob VD

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

8/12

Doc ID 8985 Rev 3

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