STS4DNF30L データシートの表示（PDF） - STMicroelectronics

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STS4DNF30L

Dual N-channel 30 V, 0.039 Ω, 4 A SO-8 STripFET™ Power MOSFET

STMicroelectronics 

STS4DNF30L

Electrical characteristics

Table 6.

Symbol

Switching times

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off Delay Time

Fall Time

Test conditions

Min. Typ. Max. Unit

VDD = 15 V, ID = 2 A,

11

ns

RG = 4.7 Ω, VGS = 4.5 V -

(see Figure 13)

100

-

ns

VDD=15 V, ID=2 A,

RG=4.7 Ω, VGS= 4.5 V

(see Figure 13)

25

ns

-

-

22

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

t(s) ISD

c ISDM (1)

du VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Pro trr

te Qrr

le IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A, VGS = 0

ISD = 4 A, VDD = 20 V

di/dt = 100 A/µs,

Tj = 150 °C

(see Figure 15)

o 1. Pulse width limited by safe operating area.

Obsolete Product(s) - Obs 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

4

A

-

16 A

-

1.2 V

30

ns

-

18

nC

1.2

A

Doc ID 8985 Rev 3

5/12

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