STS4DNF30L データシートの表示（PDF） - STMicroelectronics

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STS4DNF30L

Dual N-channel 30 V, 0.039 Ω, 4 A SO-8 STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS4DNF30L

(TCASE = 25 °C unless otherwise specified)

Table 4.

Symbol

On/off states

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source

V(BR)DSS Breakdown voltage

ID = 250 µA, VGS = 0

30

V

Zero gate voltage

VDS = Max rating

1 µA

IDSS Drain current (VGS = 0)

t(s) IGSS

duc VGS(th)

Pro RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

lete Table 5.

so Symbol

Dynamic

Parameter

b Ciss

- O Coss

t(s) Crss

uc Qg

rod Qgs

Obsolete P Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

VDS= Max rating,

TC = 125 °C

VGS = ± 16 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 2 A

VGS = 4.5 V, ID = 2 A

10 µA

±100 nA

1

V

0.039 0.050 Ω

0.046 0.060 Ω

Test conditions

VDS = 25 V, f = 1 MHz,

VGS = 0

VDD = 24 V, ID = 4 A,

VGS = 10 V

Min. Typ. Max. Unit

330

pF

-

90

pF

40

pF

6.5

9

nC

-

3.6

nC

2

nC

4/12

Doc ID 8985 Rev 3

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