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UPD72862 データシートの表示(PDF) - NEC => Renesas Technology

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UPD72862
NEC
NEC => Renesas Technology NEC
UPD72862 Datasheet PDF : 36 Pages
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µPD72862
3.3 Load Control
GROM_EN CARD_ON
0
X
1
0
1
0
1
1
CIS_ON
X
1
0
X
Description
No loading.
W_SUBSYSID, W_SUBVNDID, W_MAXLAT, W_MINGNT, W_MAX_REC, W_GUIDHi/Lo,
W_GENERAL_0 - W_GENERAL_3, W_programPhyEnable, W_aPhyEnhanceEnable are
loaded.
All parameters (W_SUBSYSID, W_SUBVNDID, W_MAXLAT, W_MINGNT, W_MAX_REC,
W_GUIDHi/Lo, W_GENERAL_0 - W_GENERAL_3, W_programPhyEnable,
W_aPhyEnhanceEnable, W_CIS_EVEN - W_CIS_ODD) are loaded.
3.4 Programming Sequence Example
The example of programming sequence to the serial EEPROM is shown below.
(1) Write SUBID register. Note1
(2) Write LATVAL register. Note1
(3) Write PAGE_S = 000 and PAR_W = 1 on Parameters Write register. Note1
(4) Wait over 13 ms for serial EEPROM access time. Note1
(5) Write W_GUIDHi register. Note2
(6) Write W_GUIDLo register. Note2
(7) Write PAGE_S = 001 and PAR_W = 1 on Parameters Write register. Note2
(8) Wait over 13 ms for serial EEPROM access time. Note2
(9) Write W_GENERAL register (W_GENERAL_0, W_GENERAL_1). Note3
(10) Write PAGE_S = 010 and PAR_W = 1 on Parameters Write register. Note3
(11) Wait over 13 ms for serial EEPROM access time. Note3
(12) Write W_GENERAL register (W_GENERAL_2, W_GENERAL_3). Note4
(13) Write PAGE_S = 011 and PAR_W = 1 on Parameters Write register. Note4
(14) Wait over 13 ms for serial EEPROM access time. Note4
(15) Write W_PHYS register (W_programPhyEnable, W_aPhyEnhanceEnable). Note5
(16) Write PAGE_S = 100 and PAR_W = 1 on Parameters Write register. Note5
(17) Wait over 13 ms for serial EEPROM access time. Note5
(18) Write W_CIS register (W_CIS_EVEN, W_CIS_ODD). Note6
(19) Write PAGE_S = 101 and PAR_W = 1 on Parameters Write register. Note6
(20) Wait over 13 ms for serial EEPROM access time. Note6
(21) Repeat (18)-(20) 15 times.
(22) Complete to write parameters into Serial EEPROM.
(23) Parameters are loaded from serial EEPROM after PCI reset.
Notes 1. If none of W_SUBSYSID, W_SUBVNDID, W_MAXLAT, W_MINGNT, W_MAX_REC in serial EEPROM
are changed, (1)-(4) transactions don’t need.
2. If none of W_GUIDHi, W_GUIDLo in serial EEPROM are changed, (5)-(8) transactions don't need.
3. If none of W_GENERAL_0, W_GENERAL_1 in serial EEPROM are changed, (9)-(11) transactions don't
need.
4. If none of W_GENERAL_2, W_GENERAL_3 in serial EEPROM are changed, (12)-(14) transactions don't
need.
Data Sheet S14265EJ2V0DS00
25

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