TGA1141-EPU データシートの表示（PDF） - TriQuint Semiconductor
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TGA1141-EPU Datasheet PDF : 9 Pages
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Advance Product Information
August 27, 2003
TGA1141-EPU
TABLE III
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C, Nominal)
Vd = 6 V, Id = 880 mA
Symbol Parameter
Gain
Small Signal
Gain
Test Condition
F = 33 – 36 GHz
F = 34 – 35.2 GHz
Limit
Min Typ Max
17 ---
16
---
Units
dB
IRL
ORL
PWR
Ipk
Input Return
Loss
Output Return
Loss
Output Power @
Pin = +21 dBm
Peak LS Drain
Current @
Pin = 21 dBm
F = 33 – 36 GHz
F = 33 – 36 GHz
F = 34 – 34.6 Hz
F = 35.2 GHz
F = 34 – 35.2 GHz
--- -8 --- dB
--- -6.5 --- dB
32
--- dBm
31.5
---
---
1.6 A
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions TCH
RθJC
TM
(oC) (°C/W) (HRS)
RθJC Thermal
Resistance
Vd = 6 V
Id = 880 mA
115
8.5 2.6 E+7
(channel to backside of Pdiss = 5.3 W
carrier)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100% of
DC power is dissipated.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
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